Simple optical system design to produce Continuous wave visible emission of direct-bandgap semiconductor (n-type GaN/sapphire -yellow emission) and indirectbandgap semiconductor (monocrystalline p-type Si- red emission) at room temperature for nanodevices
Keywords:
Continuous wave PL techniques, Silicon visible emission, GaN yellow emission, absorption coefficient, surface texture, Microptical cavity, optical properties of Lasing mirror
Abstract
There has been considerable interest in nanoemitters for different applications with low cost. A key motivation of this work in using a metallic thin film on glass or semiconductor substrate as optical system is to keep reducing the device size & its cost.
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H. Kuzmany; Solid-State Spectroscopy An Introduction, Springer-Verlag Berlin Heidelberg,Germany(1998).
D.R.Vij; Luminescence of Solid, Plenum Press, USA(1998).
-Martin T. Hill, Metallic nano-cavity lasers at near infrared wavelengths; Plasmonics: Metallic Nanostructures and Their Optical Properties VII, edited by Mark I. Stockman, Proc. of SPIE Vol. 7394, 739409(pp1-6) (2009).
D.R.Hang,C.H.Chen,Y.F.Chen,H.X.Jiang and J.Y.Lin;JOURNAL OF APPLIED PHYSICS;VOL90, No. 4,(pp1887-1890), (2001).
J.Van de Lagemaat,D.Vanmaekelbergh and J.J.Kelly; APPLIED PHYSICS LETTERS; VOL 85, No. 6,(pp 958- 959)(2004).
-H. Nakata ,K. Murayama , S. Miyazaki , M. Hirose ; Luminescence and absorption edge of a-Ge:H well layers in a-Si:H/a-Ge:H multilayers; Journal of Non-Crystalline Solids; 266-269, 1067-1071(2000).
