Simple optical system design to produce Continuous wave visible emission of direct-bandgap semiconductor (n-type GaN/sapphire -yellow emission) and indirectbandgap semiconductor (monocrystalline p-type Si- red emission) at room temperature for nanodevices
Abstract
There has been considerable interest in nanoemitters for different applications with low cost. A key motivation of this work in using a metallic thin film on glass or semiconductor substrate as optical system is to keep reducing the device size & its cost.
References
H. Kuzmany; Solid-State Spectroscopy An Introduction, Springer-Verlag Berlin Heidelberg,Germany(1998).
D.R.Vij; Luminescence of Solid, Plenum Press, USA(1998).
-Martin T. Hill, Metallic nano-cavity lasers at near infrared wavelengths; Plasmonics: Metallic Nanostructures and Their Optical Properties VII, edited by Mark I. Stockman, Proc. of SPIE Vol. 7394, 739409(pp1-6) (2009).
D.R.Hang,C.H.Chen,Y.F.Chen,H.X.Jiang and J.Y.Lin;JOURNAL OF APPLIED PHYSICS;VOL90, No. 4,(pp1887-1890), (2001).
J.Van de Lagemaat,D.Vanmaekelbergh and J.J.Kelly; APPLIED PHYSICS LETTERS; VOL 85, No. 6,(pp 958- 959)(2004).
-H. Nakata ,K. Murayama , S. Miyazaki , M. Hirose ; Luminescence and absorption edge of a-Ge:H well layers in a-Si:H/a-Ge:H multilayers; Journal of Non-Crystalline Solids; 266-269, 1067-1071(2000).